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UM5K1N
Transistors
9
8
V GS =4V
Pulsed
0.5
0.2
V DS =3V
Pulsed
200m
100m
V GS =0V
Pulsed
7
6
5
4
I D =100mA
I D =50mA
0.1
0.05
0.02
Ta= ? 25?C
25?C
75?C
125?C
50m
20m
10m
5m
Ta=125?C
75?C
25?C
? 25?C
3
2
1
0.01
0.005
0.002
2m
1m
0.5m
0.2m
? 50 ? 25
0
0
25
50
75
100 125
150
0.001
0.0001 0.0002
0.0005 0.001 0.002
0.005 0.01 0.02
0.05 0.1 0.2
0.5
0.1m
0
0.5
1
1.5
CHANNEL TEMPERATURE : Tch (?C)
Fig.7 Static drain-source on-state
resistance vs. channel
temperature
DRAIN CURRENT : I D (A)
Fig.8 Forward transfer
admittance vs. drain current
SOURCE-DRAIN VOLTAGE : V SD (V)
Fig.9 Reverse drain current vs.
source-drain voltage ( I )
200m
100m
50m
20m
10m
V GS =4V
0V
Ta=25?C
Pulsed
50
20
10
Ta=25?C
f=1MH Z
V GS =0V
C iss
1000
500
200
100
t d (off)
t f
Ta=25?C
V DD =5V
V GS =5V
R G =10 ?
Pulsed
5m
2m
1m
0.5m
0.2m
5
2
1
C oss
C rss
50
20
10
5
t r
t d (on)
0.1m
0
0.5
1
1.5
0.5
0.1
0.2
0.5
1
2
5
10
20
50
2
0.1 0.2
0.5
1
2
5
10
20
50
100
SOURCE-DRAIN VOLTAGE : V SD (V)
Fig.10 Reverse drain current vs.
source-drain voltage ( II )
DRAIN-SOURCE VOLTAGE : V DS (V)
Fig.11 Typical capacitance vs.
drain-source voltage
DRAIN CURRENT : I D (mA)
Fig.12 Switching characteristics
(See Figures 13 and 14 for
the measurment circuit and
resultant waveforms)
Switching characteristics measurement circuit
Pulse width
R G
V GS
I D
D.U.T.
R L
V DS
V GS
V DS
50%
10%
10%
90%
50%
10%
V DD
90%
90%
t d (on)
t on
t r
t d (off)
t f
t off
Fig.13 Switching time measurement circuit
Fig.14 Switching time waveforms
Rev.A
3/3
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